Molecular quantum interference apparatus and applications of same

ABSTRACT

A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second terminal group between which quantum interference affects electrical conduction, a molecular spacer having a first terminal group and a second terminal group and coupled to the molecular quantum interference unit through a chemical bonding between the first terminal group of the molecular spacer and the second terminal group of the molecular quantum interference unit, a first electrode electrically coupled to the molecular quantum interference unit and configured to supply charge carriers to or receive charge carriers from the molecular quantum interference unit, and a second electrode electrically coupled to the molecular spacer and configured to receive charge carriers from or supply charge carriers to the molecular spacer.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims the priority to and benefit of, pursuant to 35U.S.C. §119(e), U.S. provisional patent application Ser. No. 61/014,563,filed Dec. 18, 2007, entitled “MOLECULAR QUANTUM INTERFERENCE APPARATUSAND APPLICATIONS OF SAME,” by Solomon et al., which is incorporatedherein by reference in its entirety.

Some references, which may include patents, patent applications andvarious publications, are cited and discussed in the description of thisinvention. The citation and/or discussion of such references is providedmerely to clarify the description of the present invention and is not anadmission that any such reference is “prior art” to the inventiondescribed herein. All references cited and discussed in thisspecification are incorporated herein by reference in their entiretiesand to the same extent as if each reference was individuallyincorporated by reference.

STATEMENT OF FEDERALLY-SPONSORED RESEARCH

The present invention was made with Government support awarded by theAir Force Office of Sponsored Research under contract numbersFA8650-06-C-7617 and F49620-02-1-0381; Department of Defense/Air ForceOffice of Sponsored Research under contract number FA 9550-06-1-0558;Office of Naval Research of the United States under Award NumberN00014-05-1-0021, and by the National Science Foundation under AwardNumbers CHE-0719420, CHE-4101-19917/EEC-0634750, DMR-0520513,501-0791-04/BEC-0228390, and CHE-0414554. The United States Governmentmay have certain rights to this invention pursuant to these grants.

FIELD OF THE INVENTION

The present invention is generally related to the field of molecularelectronics, and more particularly, is related to molecular quantuminterference apparatus in which electrical conduction is affected byquantum interference, and applications of same.

BACKGROUND OF THE INVENTION

Recent technology developments have resulted in miniaturization ofelectronic devices. Further miniaturization of electronic devices,however, will require fundamental advances in people's approach tobuilding and designing electronic components. Molecular electronicsprovides such a frontier and is partly driven by the goal of producingactive electronic elements that rival the performance of theirsolid-state counterparts, but on a much smaller size scale. Electrontransfer¹⁻³ is of fundamental importance in broad areas of researchencompassing both natural⁴ and artificial systems.⁵ Using molecules asdiscrete electronic elements was initiated by the proposal of a singlemolecule rectifier.⁶ Since this proposal, a number of single moleculeelectronic devices have been constructed with varied behavior⁷ includingswitching,⁸ rectification,⁹⁻¹¹ coulomb blockade,¹² Kondo resonance,¹²negative differential resistance (NDR),¹³ and memory elements.¹⁴ Anumber of measurements have established single molecule transistorbehavior in UHV conditions,¹⁵⁻¹⁹ as well as using electrochemical gatecontrol.²⁰⁻²⁴ For single molecule switches, there are a number oftheoretical studies on how molecular conformational change can lead tolarge conductance changes,^(25,26) including measurements usingphotochromic molecules.²⁷ Many methods for creating molecular switchesrely on, or result in, conformational change to the molecule ofinterest.²⁸⁻³⁰ For fast and reproducible switching, and integration inuseful devices, switching should not result in conformational change.Recent work has highlighted how this can be accomplished with hydrogentransfer in a naphthalocyanine molecule at low temperature, resulting inan on/off ratio of 2.⁸

All of the molecular devices proposed and measured to date hint at thewide variety of electronic functions that can be completed within asingle molecule.³¹ Major drawbacks in comparison with solid statedevices include the low dynamic range in transport through singlemolecules and in the vibronic mechanisms²⁹ that result in slow switchingspeed. A recent proposed molecular-based device attempts to reducingdestructive quantum interference, which however is a much desiredfeature for a wide range of molecular devices such as molecular-basedinsulator, molecular-based rectifier, etc.

Therefore, a heretofore unaddressed need exists in the art to addressthe aforementioned deficiencies and inadequacies.

SUMMARY OF THE INVENTION

In one aspect, the present invention relates to a molecular quantuminterference device for use in molecular electronics. In one embodiment,the device includes a molecular quantum interference unit having a firstterminal group and a second terminal group between which quantuminterference affects electrical conduction, a molecular spacer having afirst terminal group and a second terminal group and coupled to themolecular quantum interference unit through a chemical bonding betweenthe first terminal group of the molecular spacer and the second terminalgroup of the molecular quantum interference unit, a first electrodeelectrically coupled to the molecular quantum interference unit andconfigured to supply charge carriers to or receive charge carriers fromthe molecular quantum interference unit, and a second electrodeelectrically coupled to the molecular spacer and configured to receivecharge carriers from or supply charge carriers to the molecular spacer.

The molecular quantum interference unit comprises one selected from thegroup of a cross-conjugated unit, a meta substituted phenyl ring, asubstituted cyclic system that is not a phenyl ring, and a π-stackedunit. The cross-conjugated unit can be a cyclic or acycliccross-conjugated unit.

The molecular spacer comprises one selected from the group of a singlebonded carbon unit, a double bonded carbon unit, a triple bonded carbonunit, a phenyl ring, a thiophene ring, an oxygen atom, a nitrogen atom,a sulphur atom, a silicon atom, a phosphorus atom, a boron atom and anycombination of them. In one embodiment, the chemical bonding between thefirst terminal group of the molecular spacer and the second terminalgroup of the molecular quantum interference unit comprises acarbon-carbon single bond.

Each of the first and second electrodes comprises a material having awork function for electron tunneling between the first and secondelectrodes, respectively, through the molecular spacer and the molecularquantum interference unit. In one embodiment, each of the first andsecond electrodes comprises an electrically conducting orsemi-conducting material. For examples, each of the first and secondelectrodes comprises at least one of gold, copper, platinum, palladium,silver, silicon, graphene, carbon nanotubes, iridium, ITO and dopedsemiconductor materials.

In one embodiment, the first electrode is electrically coupled to themolecular quantum interference unit through a chemical bonding, whereinthe chemical bonding is formed by one or more molecules in or near asurface of the first electrode being chemisorbed with at least a part ofthe first terminal group of the molecular quantum interference unitthrough chemical reacting with the one or more molecules in or near thesurface. In another embodiment, the first electrode is electricallycoupled to the molecular quantum interference unit through anon-chemical bonding.

In one embodiment, the second electrode is electrically coupled to themolecular spacer through a chemical bonding, wherein the chemicalbonding is formed by one or more molecules in or near a surface of thesecond electrode being chemisorbed with at least a part of the secondterminal group of the molecular spacer through chemical reacting withthe one or more molecules in or near the surface. In another embodiment,the second electrode is electrically coupled to the molecular spacerthrough a non-chemical bonding.

In one embodiment, a current source is electrically coupled to at leastone of the first electrode and the second electrode for establishing abias current or voltage across the first electrode and the secondelectrode, wherein when a bias current or voltage is established acrossthe first electrode and the second electrode, a transmission spectrum ismeasurable between the first electrode and the second electrode andvariable with the bias voltage.

In another aspect, the present invention relates to a molecular quantuminterference device for use in molecular electronics. In one embodiment,the device includes at least one molecular quantum interference unithaving a first terminal group and a second terminal group between whichquantum interference affects electrical conduction; at least twomolecular spacers, each having a first terminal group and a secondterminal group, wherein a first one of the at least two molecularspacers is coupled to the molecular quantum interference unit through achemical bonding between the first terminal group of the first molecularspacer and the second terminal group of the molecular quantuminterference unit, and a second one of the two molecular spacers iscoupled to the molecular quantum interference unit through a chemicalbonding between the second terminal group of the second molecular spacerand the first terminal group of the molecular quantum interference unit,respectively; a first electrode electrically coupled to the secondmolecular spacer; and a second electrode electrically coupled to thefirst molecular spacer.

The molecular quantum interference unit comprises one selected from thegroup of a cross-conjugated unit, a meta substituted phenyl ring, asubstituted cyclic system that is not a phenyl ring, and a π-stackedunit, wherein the cross-conjugated unit comprises a cyclic or acycliccross-conjugated unit.

Each of the at least two molecular spacers comprises one selected fromthe group of a single bonded carbon unit, a double bonded carbon unit, atriple bonded carbon unit, a phenyl ring, a thiophene ring, an oxygenatom, a nitrogen atom, a sulphur atom, a silicon atom, a phosphorusatom, a boron atom and any combination of them. In one embodiment, eachof the chemical bonding between the first terminal group of the firstmolecular spacer and the second terminal group of the molecular quantuminterference unit, and the chemical bonding between the second terminalgroup of the second molecular spacer and the first terminal group of themolecular quantum interference unit comprises a carbon-carbon singlebond.

Each of the first and second electrodes comprises a material having awork function for electron tunneling between the first and secondelectrodes, respectively, through the molecular spacers and themolecular quantum interference unit. In one embodiment, each of thefirst and second electrodes comprises an electrically conducting orsemi-conducting material. For examples, each of the first and secondelectrodes comprises at least one of gold, copper, platinum, palladium,silver, silicon, graphene, carbon nanotubes, iridium, ITO and dopedsemiconductor materials.

In one embodiment, at least one of the first electrode and the secondelectrode is electrically coupled to a corresponding molecular spacerthrough a chemical bonding. In another embodiment, at least one of thefirst electrode and the second electrode is electrically coupled to acorresponding molecular spacer through a non-chemical bonding.

In one embodiment, a current source is electrically coupled to at leastone of the first electrode and the second electrode for establishing abias current or voltage across the first electrode and the secondelectrode, wherein when a bias current or voltage is established acrossthe first electrode and the second electrode, a transmission spectrum ismeasurable between the first electrode and the second electrode andvariable with the bias voltage.

In another embodiment, the at least two molecular spacers comprise atleast one more spacer coupled between the molecular quantum interferenceunit and one of the first electrode and the second electrode.

In yet another aspect, the present invention relates to a molecularquantum interference device for use in molecular electronics. In oneembodiment, the device includes at least one molecular spacer having afirst terminal group and a second terminal group; at least two molecularquantum interference units, each having a first terminal group and asecond terminal group between which quantum interference affectselectrical conduction, wherein a first one of the at least two molecularquantum interference units is coupled to the at least one molecularspacer through a chemical bonding between the first terminal group ofthe at least one molecular spacer and the second terminal group of thefirst molecular quantum interference unit, and a second one of the atleast two molecular quantum interference units is coupled to the atleast one molecular spacer through a chemical bonding between the secondterminal group of the at least one molecular spacer and the firstterminal group of the second molecular quantum interference unit,respectively; a first electrode electrically coupled to the firstmolecular quantum interference unit; and a second electrode electricallycoupled to the second molecular quantum interference unit.

Each of the at least two molecular quantum interference units comprisesone selected from the group of a cross-conjugated unit, a metasubstituted phenyl ring, a substituted cyclic system that is not aphenyl ring, and a π-stacked unit, wherein the cross-conjugated unitcomprises a cyclic or acyclic cross-conjugated unit.

The at least one molecular spacer comprises one selected from the groupof a single bonded carbon unit, a double bonded carbon unit, a triplebonded carbon unit, a phenyl ring, a thiophene ring, an oxygen atom, anitrogen atom, a sulphur atom, a silicon atom, a phosphorus atom, aboron atom and any combination of them. In one embodiment, each of thechemical bonding between the first terminal group of the at least onemolecular spacer and the second terminal group of the first molecularquantum interference unit, and the chemical bonding between the secondterminal group of the at least one molecular spacer and the firstterminal group of the second molecular quantum interference unitcomprises a carbon-carbon single bond.

Each of the first and second electrodes comprises a material having awork function for electron tunneling between the first and secondelectrodes, respectively, through the at least one molecular spacer andthe at least two molecular quantum interference units. In oneembodiment, each of the first and second electrodes comprises anelectrically conducting or semi-conducting material. For examples, eachof the first and second electrodes comprises at least one of gold,copper, platinum, palladium, silver, silicon, graphene, carbonnanotubes, iridium, ITO and doped semiconductor materials.

In one embodiment, at least one of the first electrode and the secondelectrode is electrically coupled to a corresponding molecular quantuminterference unit through a chemical bonding. In another embodiment, atleast one of the first electrode and the second electrode iselectrically coupled to a corresponding molecular quantum interferenceunit through a non-chemical bonding.

In one embodiment, a current source is electrically coupled to at leastone of the first electrode and the second electrode for establishing abias current or voltage across the first electrode and the secondelectrode, wherein when a bias current or voltage is established acrossthe first electrode and the second electrode, a transmission spectrum ismeasurable between the first electrode and the second electrode andvariable with the bias voltage.

In one embodiment, the at least one molecular spacer comprises at leasttwo molecular spacers coupled between the at least two molecular quantuminterference units or between one of the first electrode and the secondelectrode and one of the at least two molecular quantum interferenceunits.

In another embodiment, the at least two molecular quantum interferenceunits comprise at least one more molecular quantum interference unitcoupled between the at least one molecular spacer and one of the firstelectrode and the second electrode.

These and other aspects of the present invention will become apparentfrom the following description of the preferred embodiment taken inconjunction with the following drawings, although variations andmodifications therein may be affected without departing from the spiritand scope of the novel concepts of the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate one or more embodiments of theinvention and, together with the written description, serve to explainthe principles of the invention. Wherever possible, the same referencenumbers are used throughout the drawings to refer to the same or likeelements of an embodiment, and wherein:

FIG. 1 shows examples of a QIU, the systems in the first row are acycliccross-conjugated units and the second row are cyclic cross-conjugatedsystems, which can be used in various embodiments of the presentinvention.

FIG. 2 shows examples of a spacer, which can be used in variousembodiments of the present invention.

FIG. 3 shows examples of end groups, which can be used in variousembodiments of the present invention.

FIG. 4 shows systems that could produce transmission according tovarious embodiments of the present invention. The systems in the thirdrow are examples of cross-conjugated units being used as the quantuminterference unit.

FIG. 5 shows systems that could produce transmission according tovarious embodiments of the present invention. The systems in the thirdrow are examples of cross-conjugated units being used as the quantuminterference unit.

FIG. 6 shows the correspondence between a current-voltage curve and atransmission curve according to various embodiments of the presentinvention.

FIG. 7 shows schematically an apparatus of rectifier operation for theexample of two cross-conjugated units separated by a spacer according toone embodiment of the present invention. The interference positions movein two different directions with applied bias as a result of theirdifferent positions relative to each of the two leads. Note that inmolecules with multiple cross-conjugated units, an applied bias voltagewill split the interference features. This splitting occurs because anapplied bias has an electron donating or withdrawing effect that movesthe interference position as shown in FIG. 8 below. Further note thatthe more positive an electrode is, the more it moves the interferencefeature of the closest cross-conjugated group to lower energy andconversely the more negative an electrode, the more it moves theinterference feature to higher energy.

FIG. 8 shows the shifting of the interference position in a moleculewith substituents off a cross-conjugated unit as the QIU according toone embodiment of the present invention. Note that electron donating andwithdrawing groups are attached to the cross-conjugated unit. Theinterference feature is shown to be tuned ±1.5 eV from the Fermi levelby changing the electron density on the cross-conjugated bond. Thequalitatively similar results calculated using ATK are given in thesupporting information.

FIG. 9 shows that, for a small example rectifier with twocross-conjugated units separated by a spacer according to one embodimentof the present invention, the transmission curves move substantiallywith applied bias (shown in darker and lighter lines for V_(SD)=+1V and−1V, respectively). Note that an asymmetric molecule with thecorresponding transmission plots is shown as an insert. The asymmetrycauses two antiresonance features at different energy. At negative biasthese antiresonance feature move together and at positive applied biasthey move apart.

FIG. 10 shows the performance of an example rectifier with a cycliccross-conjugated QIU at one end and two linearly cross-conjugated unitsat the other according to one embodiment of the present invention. Inthe middle panel the red curve is current in the forward bias directionand the black curve is the negative of the current in the reverse biasdirection so that the two can be seen together. This large asymmetry inthe current-voltage characteristics results in a large rectificationratio. Note that in (a), the positive bias current/voltage behavior isshown as curve 1001 and the negative bias current/voltage behavior isshown as curve 1003. The rectification ratio is calculated by dividingthe positive voltage bias by the negative voltage bias. In (b), therectification ratio as a function of voltage, as curve 1101, shows apeak of >150,000 at 0.8V applied voltage.

FIG. 11 shows that in an ideal switch the off state would be a perfectinsulator (lower line at 0 G₀) and the on state would be a perfectconductor (upper line at 1 G₀). In a single transport channel, ballistictransport through a perfect conductor representing the on state is oneG₀, the quantum of conductance (˜12.91 KΩ)⁻¹.

FIG. 12 shows schematically the transmission and current/voltagebehavior of a voltage switch, where the conductance goes from 0 to ˜1 G₀as a function of voltage. The red line represents a Au wire and thegreen line represents the molecule of interest. In (a), the transmissionplot for a potential device is shown in solid line having an off stateat and near E=E_(f) and on state at all other energies. (b) To calculatethe current and conductance of (a), the transmission plot (assuminginvariance to applied voltage) is integrated between the chemicalpotentials of the leads, shown as the shaded region. (c) shows thecurrent/voltage behavior realized by integrating the transmission plotin (b). The conductance as a function of voltage is shown in (d).

FIG. 13 shows the transmission of a proposed molecule with distinct onand off states is shown again as the solid line in (a). In plots (b),(c), and (d) the molecule has been switched in three different ways froma low conductance state to a high conductance state at low bias voltage.In (b) it shows a situation where an applied gate voltage might shiftthe dip in the transmission spectrum away from the Fermi energy shown asthe two dashed lines, respectively. In (c) a large change in themolecule occurs causing the transmission to drastically change. (d) Amolecular interaction event or change in electron density in themolecule could shift the transmission spectrum.

FIG. 14 (a) and (b) show the behavior of the HOMO and LUMO energies andthe interference minimum with increasing molecular length, respectively.In the series of molecules shown in (a), one triple bond is added toboth ends of the molecule. This increased conjugation length leads to asmaller HOMO-LUMO gap and a small decrease in the transmission minimum.In (b), a cross-conjugated unit and a triple bond are added leading tolittle change in the HOMO-LUMO gap but a large decrease in thetransmission minimum.

FIG. 15 shows calculations done using gDFTB to differentiate between the6 and π transport. In (a), four molecules with a 17 carbon atom backboneare shown: three conjugated molecules with 1,3, and 5 cross-conjugatedunits, and one saturated carbon chain. In (b), the total transmissionthrough the 4 molecules is shown with ˜8 orders of magnitude variationin transmission at E_(f). In (c), the a transmission at E_(f) decreases˜2 orders of magnitude for each added cross-conjugated bond. The kinksin the carbon backbone in the cross-conjugated molecule decrease the acoupling. The π component of the transmission is shown in (d): both thedepth and width of the interference feature increase sharply with addedcross-conjugated units.

FIG. 16 shows calculations of conductance change with applied gatevoltage in three test molecules. In (b), the transmission spectrumcalculated for the molecules shown in (a) includes a promising potentialmolecular transistor, the cross-conjugated molecule in black. The solidlines are calculated using ATK and the dashed lines calculated usingHückel-IV. (c) (d) and (e) show the effect of gate voltage on theconductance plot. (f) shows the calculated change in conductance betweenon and off state of 8 orders of magnitude in the cross-conjugatedmolecule.

FIG. 17 shows transmission spectrum calculated using gDFTB, ATK andHückel-IV in (a), and the rectification ratio as a function of voltagecalculated using these programs in (b), respectively. Differences in thelocation of the resonance and interference features between the codeslead to a change in the voltage and magnitude of the maximumrectification ratio. More importantly, the behavior of theantiresonances is consistent between codes.

FIG. 18 shows transmission plots for the molecule shown in FIG. 10calculated using gDFTB, Hückel-IV 3.0 and ATK. The differences in thetransmission spectrum are largely due to the energetic positioning ofthe antiresonance features and the localized oxygen resonance. Thechanges in the transmission spectrum lead to large changes in themaximum rectification ratios calculated from >150,000 in Hückel-IV, to501 in gDFTB, to 83.5 in ATK.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is more particularly described in the followingexamples that are intended as illustrative only since numerousmodifications and variations therein will be apparent to those skilledin the art. Various embodiments of the invention are now described indetail. Referring to the drawings, like numbers indicate like partsthroughout the views. As used in the description herein and throughoutthe claims that follow, the meaning of “a,” “an,” and “the” includesplural reference unless the context clearly dictates otherwise. Also, asused in the description herein and throughout the claims that follow,the meaning of “in” includes “in” and “on” unless the context clearlydictates otherwise.

DEFINITIONS

The terms used in this specification generally have their ordinarymeanings in the art, within the context of the invention, and in thespecific context where each term is used. Certain terms that are used todescribe the invention are discussed below, or elsewhere in thespecification, to provide additional guidance to the practitionerregarding the description of the invention. For convenience, certainterms may be highlighted, for example using italics and/or quotationmarks. The use of highlighting has no influence on the scope and meaningof a term; the scope and meaning of a term is the same, in the samecontext, whether or not it is highlighted. It will be appreciated thatthe same thing can be said in more than one way. Consequently,alternative language and synonyms may be used for any one or more of theterms discussed herein, nor is any special significance to be placedupon whether or not a term is elaborated or discussed herein. Synonymsfor certain terms are provided. A recital of one or more synonyms doesnot exclude the use of other synonyms. The use of examples anywhere inthis specification, including examples of any terms discussed herein, isillustrative only, and in no way limits the scope and meaning of theinvention or of any exemplified term. Likewise, the invention is notlimited to various embodiments given in this specification.

As used herein, “around”, “about” or “approximately” shall generallymean within 20 percent, preferably within 10 percent, and morepreferably within 5 percent of a given value or range. Numericalquantities given herein are approximate, meaning that the term “around”,“about” or “approximately” can be inferred if not expressly stated.

As used herein, “conjugated” shall generally mean a system ofalternating single and double bonds.

A cross-conjugated compound is in general defined as a compoundpossessing three unsaturated groups, two which are although conjugatedto a third unsaturated center are not conjugated to each other.” (Phelan& Orchin, 1968.) As used herein, “a cross-conjugated compound” includesmolecules where only the third of the saturated centers mentioned aboveis present. In that case, the other two unsaturated centers are replacedby saturated units, however the central core remains.

As used herein, “cross-conjugated unit (CCU)” shall generally mean across-conjugated component in a molecule. A cross-conjugated unit can bea cyclic or acyclic cross-conjugated unit.

As used herein, “π-stacked unit (PCU)” shall generally mean a componentof a molecule comprising multiple conjugated components tethered in aπ-stacked orientation.

As used herein, “quantum interference unit (QIU)” shall generally mean acomponent of a molecule that comprises at least one cross-conjugatedunit, oriented within a molecule so that the cross-conjugated pathexists along the direction of charge flow, a meta substituted phenylring, a substituted cyclic system that is not a phenyl ring, and/or aπ-stacked unit. The cross-conjugated unit can be a cyclic or acycliccross-conjugated unit. FIG. 1 provides a generic QIU 102 in general,where the QIU 102 has a first terminal group 104 and a second terminalgroup 106 between which quantum interference affects electricalconduction, and several QIU examples in specific, where for instances inthe first row are acyclic cross-conjugated units-based QIUs and in thesecond row are cyclic cross-conjugated units-based QIUs.

As used herein, “spacer” shall generally mean a component of a moleculethat comprises a single bonded carbon unit, a double bonded carbon unit,a triple bonded carbon unit, a phenyl ring, a thiophene ring, an oxygenatom, a nitrogen atom, a sulphur atom, a silicon atom, a phosphorusatom, a boron atom and any combination of them. FIG. 2 provides ageneric spacer 212 in general, where the spacer 212 has a first terminalgroup 206 and a second terminal group 216 that each can be coupled toand/or with a QIU or an electrode, and several spacer examples inspecific.

As used herein, “chemical bonding” shall generally mean the propertythat atoms posses of joining together to form molecules, and can takevarious forms, including ionic bonding, covalent bonding and metallicbonding.

OVERVIEW OF THE INVENTION

In one aspect of the invention, it relates to one or more molecularelectronic devices such as a molecular quantum interference apparatus,which has a functional component that comprises active molecules,molecules with at least one quantum interference unit.

The description will be made as to the embodiments of the presentinvention in conjunction with the accompanying drawings of FIGS. 1-18.In accordance with the purposes of this invention, as embodied andbroadly described herein, this invention, in one aspect, relates to amolecular quantum interference device for use in molecular electronics.In one embodiment as shown in FIG. 4( a), where such a device 400 isillustrated, the device 400 includes a molecular quantum interferenceunit 402 having a first terminal group and a second terminal groupbetween which quantum interference affects electrical conduction. Thedevice 400 further has a molecular spacer 412 having a first terminalgroup and a second terminal group. The molecular spacer 412 is coupledto the molecular quantum interference unit 402 through a chemicalbonding 406 between the first terminal group of the molecular spacer 412and the second terminal group of the molecular quantum interference unit402. Moreover, the device 400 has a first electrode 401 electricallycoupled to the molecular quantum interference unit 402 and configured tosupply charge carriers to or receive charge carriers from the molecularquantum interference unit 402, and a second electrode 411 electricallycoupled to the molecular spacer 412 and configured to receive chargecarriers from or supply charge carriers to the molecular spacer 412,respectively.

The molecular quantum interference unit 402 is a compound selected fromthe group of a cross-conjugated unit, a meta substituted phenyl ring, asubstituted cyclic system that is not a phenyl ring, and a π-stackedunit. The cross-conjugated unit can be a cyclic or acycliccross-conjugated unit.

The molecular spacer 412 is a compound selected from the group of asingle bonded carbon unit, a double bonded carbon unit, a triple bondedcarbon unit, a phenyl ring, a thiophene ring, an oxygen atom, a nitrogenatom, a sulphur atom, a silicon atom, a phosphorus atom, a boron atomand any combination of them. In one embodiment, the chemical bondingbetween the first terminal group of the molecular spacer 412 and thesecond terminal group of the molecular quantum interference unit 402 isa carbon-carbon single bond.

Each of the first and second electrodes 401, 411 is made from a materialhaving a work function for electron tunneling between the first andsecond electrodes 401, 411, respectively, through the molecular spacer412 and the molecular quantum interference unit 412. In one embodiment,each of the first and second electrodes 401, 411 is made from anelectrically conducting or semi-conducting material. For examples, eachof the first and second electrodes 401, 411 can be made from at leastone of gold, copper, platinum, palladium, silver, silicon, graphene,carbon nanotubes, iridium, ITO and doped semiconductor materials. Interms of physics, the work function of the material is related toE-E_(f), where E is the energy of the electron, and E_(F) is the Fermilevel (E_(F)) of the material from which the first and second electrodes401, 411 is made

In one embodiment, the first electrode 401 is electrically coupled tothe molecular quantum interference unit 402 through a chemical bonding404, wherein the chemical bonding 404 is formed by one or more moleculesin or near a surface of the first electrode 401 being chemisorbed withat least a part of the first terminal group of the molecular quantuminterference unit 402 through chemical reacting with the one or moremolecules in or near the surface of the first electrode 401 that isfacing and interacting with the first electrode 401. Alternatively, thefirst electrode 401 can be electrically coupled to the molecular quantuminterference unit 402 through a non-chemical bonding.

Similarly, in one embodiment, the second electrode 411 is electricallycoupled to the molecular spacer 412 through a chemical bonding 416,wherein the chemical bonding 416 is formed by one or more molecules inor near a surface of the second electrode 411 being chemisorbed with atleast a part of the second terminal group of the molecular spacer 412through chemical reacting with the one or more molecules in or near thesurface that is facing and interacting with the second electrode 411.Alternatively, the second electrode 411 can be electrically coupled tothe molecular spacer 412 through a non-chemical bonding.

The chemical bonding between an electrode and a molecular quantuminterference unit or a molecular spacer can be realized by many ways, asknown to people skilled in the art. For example, a thiol group loses itsterminal hydrogen and the sulfur atom is chemically bound to a goldsurface, or an ethylene group reacts with dangling bonds on a siliconsurface resulting in carbon-silicon bonds. Additional examples of endgroups on a molecular quantum interference unit or a molecular spacerthat could be used for interaction with an electrode are shown in FIG.3.

In the case of a non-chemical bonding such as a physical interactionbetween an electrode and a molecular quantum interference unit or amolecular spacer, non-bonding interactions bind the molecular quantuminterference unit or the molecular spacer to a corresponding electrode,either directly, with the molecules interacting through space with thesurface of the corresponding electrode, or indirectly through aninteraction with some sort of capping layer on the surface of thecorresponding electrode.

In one embodiment, a current source is electrically coupled to the firstelectrode 401 (through conducting line 403) and the second electrode 411(through conducting line 413) for establishing a bias current or voltage(VSD) across the first electrode 401 and the second electrode 411,wherein when a bias current or voltage VSD is established across thefirst electrode 401 and the second electrode 413, a transmissionspectrum such as an I-V curve is measurable between the first electrode401 and the second electrode 411 and variable with the bias voltage VSD.Exemplary I-V curves of molecular quantum interference devices accordingto various embodiments of the present invention are further describedbelow in connection with drawings, for examples, FIG. 6, FIG. 9 and FIG.10.

A molecular quantum interference device of the present invention canhave one or more molecular spacers. The molecular spacers can be same ordifferent. In embodiments as shown in FIG. 4( c) and FIG. 4( e), wheresuch devices are illustrated with electrodes made from gold (Au), such adevice includes at least one molecular quantum interference unit havinga first terminal group and a second terminal group between which quantuminterference affects electrical conduction. The device has at least twomolecular spacers: each of them has a first terminal group and a secondterminal group, wherein a first one of the at least two molecularspacers is coupled to the molecular quantum interference unit through achemical bonding between the first terminal group of the first molecularspacer and the second terminal group of the molecular quantuminterference unit, and a second one of the two molecular spacers iscoupled to the molecular quantum interference unit through a chemicalbonding between the second terminal group of the second molecular spacerand the first terminal group of the molecular quantum interference unit,respectively. The device has a first electrode (such as the onepositioned in the left as shown in FIGS. 4( c) and 4(e)) electricallycoupled to the second molecular spacer, and a second electrode (such asthe one positioned in the right as shown in FIGS. 4( c) and 4(e))electrically coupled to the first molecular spacer. For the device shownin FIG. 4( c), there are one molecular quantum interference unit andfour molecular spacers positioned between the first and secondelectrodes. Between an electrode and a molecular quantum interferenceunit, there can be one or more molecular spacers.

Similarly, a molecular quantum interference device of the presentinvention can have one or more molecular quantum interference units. Themolecular quantum interference units can be same or different. Moreover,as shown in FIGS. 5( a)-(e), molecular quantum interference devices ofthe present invention can have one or more molecular quantuminterference units, which can be same or different, with one or moremolecular spacers, which also can be same or different. This flexbilityto have a molecular quantum interference device with a desiredcombination of a plurality of molecular quantum interference units and aplurality of molecular spacers offered by the present invention allows awide range of design choices and hence many applications of themolecular quantum interference device in molecular electronics.

In one embodiment as shown in FIG. 5( a), a device 500 includes at leastone molecular spacer 512 that has a first terminal group and a secondterminal group. The device 500 has two molecular quantum interferenceunits 502, 522, each having a first terminal group and a second terminalgroup between which quantum interference affects electrical conduction.A first one, here molecular quantum interference unit 502, of the twomolecular quantum interference units 502, 522 is coupled to themolecular spacer 512 through a chemical bonding 506 between the firstterminal group of the molecular spacer 512 and the second terminal groupof the first molecular quantum interference unit 502, and a second one522, here molecular quantum interference unit 522, of the two molecularquantum interference units 502, 522 is coupled to the at least onemolecular spacer 512 through a chemical bonding 526 between the secondterminal group of the at least one molecular spacer 512 and the firstterminal group of the second molecular quantum interference unit 522,respectively. A first electrode 501 is electrically coupled to the firstmolecular quantum interference unit 502, and a second electrode 511 iselectrically coupled to the second molecular quantum interference unit522, respectively.

Each of the two molecular quantum interference units 502, 522 is acompound selected from the group of a cross-conjugated unit, a metasubstituted phenyl ring, a substituted cyclic system that is not aphenyl ring, and a π-stacked unit, wherein the cross-conjugated unit canbe a cyclic or acyclic cross-conjugated unit. Molecular quantuminterference units 502, 522 can be same or different.

The molecular spacer 512 is a compound selected from the group of asingle bonded carbon unit, a double bonded carbon unit, a triple bondedcarbon unit, a phenyl ring, a thiophene ring, an oxygen atom, a nitrogenatom, a sulphur atom, a silicon atom, a phosphorus atom, a boron atomand any combination of them. In one embodiment, each of the chemicalbonding 506 between the first terminal group of the molecular spacer 512and the second terminal group of the first molecular quantuminterference unit 502, and the chemical bonding 526 between the secondterminal group of the molecular spacer 512 and the first terminal groupof the second molecular quantum interference unit 522 is a carbon-carbonsingle bond.

In one embodiment as shown in FIG. 5( b), a molecular quantuminterference device of the present invention has three molecular spacerscoupled between two molecular quantum interference units, which arepositioned between a first electrode and a second electrode.

In another embodiment as shown in FIG. 5( c), a molecular quantuminterference device of the present invention has five molecular spacersand two molecular quantum interference units, which are positionedbetween a first electrode and a second electrode with three molecularspacers between the first and second electrodes.

In yet another embodiment as shown in FIG. 5( d), a molecular quantuminterference device of the present invention has three molecular spacerscoupled between two molecular quantum interference units, which arepositioned between a first electrode and a second electrode, and each ofwhich is a cross-conjugated unit.

In a further embodiment as shown in FIG. 5( e), a molecular quantuminterference device of the present invention has five molecular spacersand two molecular quantum interference units, which are positionedbetween a first electrode and a second electrode with three molecularspacers between the first and second electrodes. Each of the twomolecular quantum interference units is a cross-conjugated unit.

A molecular quantum interference device of the present invention can beused as an insulator, a molecular switch, a memory device, a transistor,a diode, a rectifier, a dielectric and a sensor, among other things.

Without intent to limit the scope of the invention, additional exemplaryembodiment and their related results according to the embodiments of thepresent invention are given below. Note that titles or subtitles may beused in the examples for convenience of a reader, which in no way shouldlimit the scope of the invention. Moreover, certain theories areproposed and disclosed herein; however, in no way they, whether they areright or wrong, should limit the scope of the invention so long as dataare processed, sampled, converted, or the like according to theinvention without regard for any particular theory or scheme of action.

EXAMPLES

While there has been shown several and alternate embodiments of thepresent invention, it is to be understood that certain changes can bemade as would be known to one skilled in the art without departing fromthe underlying scope of the invention as is discussed and set forthabove. Furthermore, the embodiments described above are only intended toillustrate the principles of the present invention and are not intendedto limit the scope of the invention to the disclosed elements.

Example 1

In designing a single molecule electronic device, it is helpful to askwhat transport behavior is necessary for a molecule to function as anideal transistor (switch), memory element, or a chemical sensor. In thisexemplary embodiment of the present invention, a molecular switch isdescribed. FIG. 11 shows the conductance of such a single-channel devicewith a well defined on state and off state. The line at a lower positionindicates a perfect insulator. The line at 1 G₀ indicates a perfectconductor representing ballistic single-channel transport, where theprobability of back electron scattering within the molecule is zero.This limit of 1 G₀, is a direct result from quantum theory,^(36,37)which has been measured in chains of Au atoms^(38,39) at high bias of 2Volts,^(40,41) and has been verified in computationalcalculations^(42,43) With the upper and lower bounds of conductancedefined by a perfect conductor and a perfect insulator, it seems trivialthat a perfect switch would be a perfect insulator in the off state anda perfect conductor in the on state as shown in FIG. 11. All molecules,which have a non-constant transmission probability as a function ofenergy, can be considered a switch or transistor (because a change inbias or gate voltage leads to a change in conductance). An ideal switchwould need to satisfy the following requirements: (1) an infinite ratioof the on current/off current (I_(on)/I_(off)), (2) a subthresholdswing⁴⁴ of 0 mV/decade indicating a switch that abruptly changes fromthe off state to the on state at a defined threshold voltage, (3) fastswitching times that do not rely on nuclear motion but only changes inthe relative electron density, (4) reproducibility and stability²⁹ byminimizing charging and geometric organization, and (5) low biasoperation, energetically separated from a molecular resonance. Whilemany other factors including leakage current, threshold voltage, andcost are extremely important, following discussion is focused on thefive criteria listed above, specifically the I_(on)/I_(off) ratio andthe subthreshold swing.

Example 2

In this exemplary embodiment of the present invention, how theconductance through a molecule can switch as a function of voltage isdiscussed. In a two-probe single molecule junction, measurements arelimited to the current as a function of voltage, along with thederivative and second derivative of the data. In charge transportcalculations, we determine the transmission probability of an incidentelectron as a function of energy. Integration of the transmissionprobability over the range of chemical potentials of the left and rightleads will give the current.³⁷ The transmission plots provide moredetail on the molecular causes of the I/V characteristics; therefore,the following discussion is focused on understanding and controlling theelectron transmission probability.

In FIG. 12( a), the transmission through a perfect conductor is shown inred, a perfect insulator in blue, and a candidate for a molecular switchin green. This hypothetical molecule behaves as a voltage switch whereit is a perfect insulator near E_(f) with a transmission probability isequal or ˜0, and a perfect conductor at all other energies. FIG. 12( b)is the same plot with the shaded area representing a discrete biasvoltage applied across the molecular switch (assuming the bias shiftsthe chemical potentials symmetrically about E_(f)). The current iscalculated by integrating the area under the transmission and is shownin FIG. 12( c). In FIG. 12( d), the conductance as a function of voltageis shown. In FIG. 12( d), the hypothetical molecule is switching from alow conductance state at low bias voltage to a high conductance state athigh bias voltage.

Example 3

In this exemplary embodiment of the present invention, havingdemonstrated what represents an ideal transmission function for a singlemolecule with on and off states, how this transmission function can bemanipulated to achieve switching behavior is described. In a threeterminal measurement, the maximum I_(on)/I_(off) ratio for a specificmolecule is defined as the transmission probability at the energeticallyclosest frontier molecular orbital/the transmission probability at theFermi level.⁴⁴ When the incident electron energy corresponds to amolecular resonance, the elastic transmission probability is equal to or˜1. To get a large dynamic range, one needs to have molecular systemswhere the transmission probability also goes to zero. A molecularinsulator has a very low conductance state at the Fermi level and theenergetically closest resonance should have a transmission probabilityof 1. This would indicate that an imperfect molecular insulator might bean ideal electronic device, for example, a molecule with saturatedalkane groups. Such a molecule will be used below as one of referencepoints in the following calculations. The energetic separation of thenearest molecular resonance and the Fermi level define the subthresholdswing. To create functional devices, a transmission equal to or ˜0 atthe Fermi level is combined with an energetically nearby molecularresonance. In FIG. 13( b), it is shown how a gate voltage may shift thetransmission zero away from the Fermi energy. For a functionaltransistor this behavior would be ideal because at very low source-drainvoltage an applied gate could switch the molecule from an on state to anoff state. FIGS. 13( c) and (d) represent two possible scenarios forwhat can occur in a chemical sensor device, respectively. In FIG. 13(c), a chemical reaction, photoisomerization or possibly a change in thenumber of electrons on the molecule, causes a very large change in thetransmission function. A large change in the molecule of interest wouldmake reproducible switching more difficult to control in a device. Whilenot ideal for fast repetitive switching, this method of charging adevice may provide a route to creating a functional memory device withdistinct on/off states representing bit storage. FIG. 13( d) representsa shift of the molecular orbital energies upon chemical or physicalbinding of a molecular group, switching the molecule from an offconductance state to an on conductance state. It is also conceivablethat smaller shifts in the transmission spectrum would allow sequentialdetection of multiple molecules. Calculations showing both the effectsof gating (b) as well as the tuning of a transmission feature (d) willbe shown in the following sections.

Example 4

In this exemplary embodiment of the present invention, a molecularquantum interference device provides a new avenue to be used asmolecular electronic elements. The sparse density of electronic statesin organic molecules stands in sharp contrast to traditional metals orsemiconductors, and is promising for controllable interference. It hasrecently shown that cross-conjugated molecules can have a large dip inthe electron transmission probability due to interference betweenelectron transport pathways in energetic space.^(45,46)Cross-conjugation dictates the directionality of the coupling across adouble bond. “A cross-conjugated compound may be defined as a compoundpossessing three unsaturated groups, two which although conjugated to athird unsaturated center are not conjugated to each other.”³⁴ It isshown, using model systems, that any site energy not directly betweenthe source and drain will cause interference features in thetransmission.⁴⁷ Most of these interference features occur at energiesoutside the highest occupied molecular orbital (HOMO)—lowest unoccupiedmolecular orbital (LUMO) gap. What makes cross-conjugated moleculesintriguing from a molecular electronics point of view is the location ofthe interference feature at or near the Fermi energy in anexperimentally relevant location.^(45,47) There is a large syntheticknowledge base regarding cross-conjugated molecules⁴⁸ indicating thatthis molecular motif may provide a unique new area for designingelectronic devices. In previous work of the inventors, it was calculatedthe dynamic range in transmission probability accessible near the Fermilevel to be ˜9 orders of magnitude.⁴⁵ This large variation intransmission probability is attributed to interference cancellingtransport through the π system.⁴⁵ This interference behavior opens thepossibility of having a molecule that acts like an insulator (alkane) atlow bias and a π conjugated molecule at slightly higher bias. The HOMOand LUMO energy levels are unrelated to the presence of an interferencefeature, thus it is conceivable to design a conjugated molecule with asmall HOMO-LUMO gap and extremely low mid-gap conductance. This behaviormatches well with the specifications that are showed earlier in FIG. 12and FIG. 13.

Example 5

In this exemplary embodiment of the present invention, methods forcalculating transport through single molecules in the Laundeur-Imry lowbias tunneling regime are described.^(49,52) In the low bias tunnelinglimit, one can assume that the electron does not spend a significantamount of time on the molecule in the junction, leaving the molecule inthe neutral state. In the molecules that are analyzed here, theinterference generally occurs within the HOMO-LUMO gap, energeticallyseparated from molecular resonances. All molecular structures aregeometry optimized in the absence of gold electrodes using densityfunctional theory, using B3LYP^(53,54) and 6-311G** in QCHEM 3.0.⁵⁵ Thegas phase molecules were chemisorbed (terminal hydrogens removed) to thefcc hollow site of a Au(111) surface with the Au—S bond length takenfrom the literature.⁵⁶ All transport calculations are initially doneusing Hückel-IV 3.0^(43,44,57) due to the speed of the calculation. Theresults from Hückel-IV 3.0 have shown to be quite consistent⁴⁵ withthose done using the more computationally intensive density functionaltransport codes such as gDFTB⁵⁸⁻⁶³ and ATK.^(42,64-67) gDFTB has beenused to analyze the symmetry components of the transport and ATK hasbeen used to simulate an applied gate voltage. In both cases theHückel-IV calculation is shown for comparison. In situations whereinteresting transport behavior is calculated, it is verified usingdensity functional calculations as indicated in the text. In thisdisclosure, all of the calculations are completed on the geometryoptimized structure; however, using molecular dynamics coupled totransport calculations,⁶⁸ the interference features have been shown tobe stable to geometric fluctuations and the breaking ofsymmetry.^(45,47) The use of three transport codes allows forverification of results over a range of methods. Common among the threemethods are the use of one electron Hamiltonians and non-equilibriumGreen's function methods for the transport. Both Hückel-IV and ATKcalculate the full 3D self-consistent potential under voltage bias.Hückel-IV 3.0 uses extended Hückel molecular orbitals and a relativelysmall Au electrode pad of 3 atoms on each end of the molecule. It isalso the fastest computationally. gDFTB is a tight-binding DFT program.Due to the computational benefits of self-consistent parameterization,this code allows for analysis of very large systems, including largephysical electrodes. The gDFTB program has symmetry implemented,allowing a detailed analysis of the results. ATK is currently the stateof the art DFT commercial transport package. ATK is run using a DZP (SZPfor Au) basis set using the LDA functional. The gate voltage iscalculated within the ATK code by shifting the part of the Hamiltonianthat remains when the electrode and surface atoms are removed, whichassumes an external electrostatic potential localized to the molecularregion and not a physical electrode.⁶⁷ In this calculation the gate isnot included as a physical electrode, solely a shift in the energylevels. The actual gating effect may deviate substantially from thisidealized model. Experimental methods of gating a molecule could utilizeprevious techniques or a third electrode in UHV^(12,15-19) or withelectrochemical control.²⁰⁻²⁴

Example 6

In this exemplary embodiment of the present invention, and in connectionwith FIG. 14, it is shown two series of molecules with increasing carbonbackbone length. In FIG. 14( a), a pair of triple bonds is addedsymmetrically to a cross-conjugated molecule. Shown in FIG. 14( b) is aseries of molecules where the cross-conjugated backbone has beensynthesized,⁴⁸⁻⁶⁹ made with an increasing number of cross-conjugatedunits separated by triple bonds. Comparing the position of the HOMO andLUMO for the molecules shown in FIG. 14( a) and FIG. 14( b), there is anoticeable difference in the energy shift of the resonances near −1 eVand 1 eV. In FIG. 14( a), the addition of two triple bonds to themolecule increases the length of electron delocalization and decreasesthe HOMO-LUMO gap spacing. In FIG. 14( b), with the addition of across-conjugated bond and a triple bond the HOMO level remains unchangedand the LUMO orbital shifts slightly, lowering the energetic gap. Thisbehavior is indicative of the cross-conjugated unit breaking electrondelocalization.⁷⁰⁻⁷³ As the transmission near π electron dominatedinterference features in cross-conjugated molecules is determined by thea transport, we need only lower the a coupling across the molecule tolower the transmittance minimum. In FIG. 14( a), the increased electrodeseparation caused by the additional triple bonds results in a relativelysmall reduction in the interference minimum. In FIG. 14( b), thetransmission minimum decreases ˜1.5 orders of magnitude for each 3carbon atom repeat unit added. This is a much greater sensitivity tolength than in (a) where each pair of triple bonds decreases thetransmission 0.3 orders of magnitude for each repeat unit.

Example 7

In this exemplary embodiment of the present invention, in order toaddress the different behavior of these two classes of moleculesdiscussed in EXAMPLE 6, the transmission for a series of molecules with17 carbon atoms in the backbone, shown in FIG. 15( a), was calculated.All plots in FIG. 15 are calculated in the gDFTB code so that a symmetryanalysis⁷⁴ could be completed. From the plot shown in FIG. 15( a), ithints that increasing the number of cross-conjugated units increasesboth the width and depth of the interference feature. To separate thecontributions from decreasing a coupling across the molecule and theincreasing number of cross-conjugated units, it is included a plot ofthe a transport through all 4 molecules in FIG. 15( c). This plotindicates that it is the a transport and not the number ofcross-conjugated units that defines transmission near the minimum. Thus,at low bias it is possible to directly measure the a transport inconjugated molecules. Cross-conjugated molecules may thus provide atemplate for studying a transport through bridged molecules, includingalkene, alkyne, and aryl systems.

Example 8

In this exemplary embodiment of the present invention, in order toinvestigate the sensitivity to changes in electron density, it isinvestigated the effects of attaching electron withdrawing and electrondonating groups. These calculations are all competed using Hückel-IV(the corresponding calculations using ATK are shown in supportinginformation). Using a known molecular scaffold⁷⁵ with a singlecross-conjugated unit, it was calculated the change in transmission uponbinding a series of electron donating and electron withdrawing groups tothe cross-conjugated unit. FIG. 8( a) shows the effect of increasing theelectron withdrawing strength of groups bonded to the cross-conjugatedunit. The electron withdrawing groups have two major effects on thetransmission near the Fermi level. The first effect is the movement ofthe LUMO resonance from ˜11.5 eV for the hydrogen terminatedcross-conjugated molecules to ˜0.4 eV for the NO₂ substituted molecule.This correlates with a similar shift in the interference feature tolower energy. In the CHO and NO₂ substituted molecules, the interferencefeature is seen at an energy below the HOMO molecular level. The lowbias conductance for these molecules changes by ˜10³ with increasingelectron withdrawing strength. In FIG. 8( b), the electron donatinggroups provide similar behavior to the electron withdrawing groups, butin the opposite energy direction. In most cases both the HOMO and LUMOshift to higher energy. The one exception to this is the phenylsubstituted group shown in blue, where the increased electrondelocalization provided by the aryl ring narrows the HOMO-LUMO gap. Inall of the molecules with electron donating substituents, theinterference features shift to higher energy and towards the LUMOmolecular orbital. These calculations suggest that the interferencefeature is broadly tunable across the HOMO-LUMO gap region. In designingmolecular devices, this broad tunability should allow alignment of theFermi level with the interference minimum, providing an effective offstate at zero voltage bias.

Example 9

In this exemplary embodiment of the present invention, a potentialmolecular transistor having a cross-conjugatedoligo(phenylene-enynylene) molecule with 3 repeat units is shown.⁷⁵ InFIG. 16, a comparison of the cross-conjugated molecule to a moleculewhere the conjugation is broken and to the full conjugated oligo(phenylene-ethynylene) is illustrated. In FIG. 16( b), the transmissioncurves for these three molecules are calculated using two differenttransport codes: ATK shown with solid lines and Hückel-IV shown as adotted line. For transmission factors that span ˜16 orders of magnitude,the two transport codes agree very well. The differences between the twocodes lie in the exact position of the resonances and the minima betweenthem. Experimental results are required to calibrate the performance ofthese methods; however, the trends are consistent. One can see from FIG.16( b) that the cross-conjugated molecule shown in black has a change intransmission probability of ˜16 orders of magnitude over 0.88 eV rangein incident electron energy. In comparison, for the molecule shown ingreen, with CH₂ groups breaking the conjugation, the electrontransmission changes 8 orders of magnitude over 1.2 eV. In FIG. 16( c),the transmission probability is shown for a fully conjugated specieswith a 5V applied gate voltage, calculated in ATK. To compare the gatevoltage effect, conductance for a cross-conjugated molecule is plottedin FIG. 16( d). As the bias voltage→0 the conductance is proportional tothe transmission at the Fermi level. In FIG. 16( f), it has been definedthe off state as no perturbation to the system, and the on state as 5Vgate voltage. The conductance through the cross-conjugated moleculechanges by 8 orders of magnitude with an applied gate voltage of 5V.Where the cross-conjugated units are replaced by saturated carbons, theconductance changes 3 orders of magnitude, and the fully conjugatedmolecule, shown in red, changes 1.5 orders of magnitude. These resultscould be optimized by engineering the interference minimum to occurdirectly at the Fermi level. The on state could possibly be increased 5orders of magnitude in the case of the cross-conjugated molecule byincreasing gate voltage shifting the HOMO-orbital closer to the Fermilevel; however, approaching resonance increases the probability ofelectron charging and molecular rearrangement. The cross-conjugatedmolecule has a subthreshold swing of 625 mV/decade (calculated by usingthe transmission difference between 0V and 5V gate voltage), which is2.5 and 5.25 times lower than in the conjugated and saturated molecules.The comparison between these rates is important because the conversionbetween the gate voltage used in the calculations and the gate electrodein the experiment is non trivial⁶⁷ and will have a large effect on theabsolute value of the subthreshold swing. The large dynamic range,sensitivity to incident electron energy, and switching based on changesin electron density make cross-conjugated molecules promising candidatesfor molecular transistors.

Example 10

In this exemplary embodiment of the present invention, in connectionwith FIG. 6, how a transmission spectrum translates to a measuredcurrent is described. The plot on the left panel in FIG. 6 shows themeasured current as a function of voltage and the plot on the rightpanel in FIG. 6 shows the region of the transmission spectrum that isincluded in the integral. A large dip in a transmission spectrum willtranslate to low current and conductance, whereas a peak in thetransmission spectrum will lead to higher conductance and current. Theassumption in the scheme shown in FIG. 6 is that the form of thetransmission curve does not change as a function of the applied biasvoltage. This assumption does not hold in the bias dependentnon-switching devices we will show here. It is the variation of thetransmission spectrum that results in the function of these devices. Inthe case of bias independent non-switching devices, the form of thetransmission curve may change with applied bias, or not, but in any casethe insulating character of the material is desirable over the range ofoperation. The energy range of the integration is controlled by theapplied bias; however, the form of the transmission curve is controlledby the (possibly) voltage-dependent properties of the molecule. For abias dependent non-switching device according to an exemplary embodimentof the present invention, the position of the interference feature maymove as a function of the applied bias voltage. If this movement resultsin the interference feature (large dip in the transmission) moving in orout of the window of integration then there may be dramatic changes inthe current with increasing voltage.

Example 11

In the above description of cross-conjugation and interference effectsin transmission, it mainly dealt with the case of a single (sometimesdegenerate) interference peak in symmetric molecules. In asymmetricmolecules, one can calculate a splitting of the interference peaks andmore complex transmission features. By engineering the interferencelocations and using asymmetric molecules, more complex devices can bedesigned. In this exemplary embodiment of the present invention, asingle molecule rectifier is described. This proposal was based onhaving a donor and acceptor group in a single molecule with a saturatedmolecular spacer separating the groups. The saturated linkage betweenthe functional parts of the molecule reduces communication between thesedistinctly separate groups.⁶ In the intervening years, many experimentalattempts have been made⁷⁸ to measure a rectification ratio in singlemolecule transport, with marginal success in comparison with solid statedevices. It has been noted that having asymmetric coupling to theelectrode also leads to an increased rectification ratio.⁷⁹⁻⁸³ Therectification ratio as a function of voltage is defined as the currentin one bias direction divided by the current in the other biasdirection. Measurements of rectification in thin films have beencompleted for over 40 years.^(84,85) Recent experimental measurements onthin films of molecules have measured rectification ratios of up to3000.⁸⁶ While molecules in a thin film can behave differently than atthe single molecule level, experimental advances have been made towardsunderstanding systems at both limits.⁸⁶ A number of publishedexperimental and theoretical investigations show molecular rectifierswith rectification ratio typically <<100. Very recent work using thebarrier tunneling model for transport suggests that the rectificationratio for single molecules will never be greater than 100.⁸⁸ All ofthese results are a far cry from typical solid state rectificationratios that can be >10⁵. In this section it is focused on the electronicresponses that can occur when multiple non-degenerate interferencefeatures are found in a single molecule. Essentially, most of thedesired electrical elements can be redesigned in molecules withinterference features to take advantage of the increased dynamic range.To illustrate these effects, it is shown model calculations on candidatemolecules. It should be cautioned that in molecules that are verysensitive to Fermi level placement (band lineup), the accuracy of thecalculation is limited. While the molecules presented here showextremely interesting behavior, small changes in the relative positionof the Fermi level and the molecular resonances could have largeconsequences in the measured response. The extreme sensitivity to thesefeatures will surely test the computational codes but will also providea direct way to improve their accuracy by comparison with futureexperimental measurements. Much of the uncertainty lies in the locationof the Fermi level. It would be ideal if the Fermi level could be variedand tuned to test the behavior of the molecule (perhaps using an alloyedor coated tip).

In FIG. 8, electron donating and withdrawing groups were shown to movethe interference peak over ±1.5 eV from the Fermi energy. Using theeffects of the electron donating and withdrawing groups on the positionof the molecular resonance, a class of single molecule rectifiers isshown in FIG. 7. such a single molecule rectifier has twocross-conjugated units 702, 706 (or other groups that produceinterference features, e.g., meta substituted benzene) with splitinterference features, separated by a conjugated spacer 712. With anapplied bias, provided by voltage source 750, across the moleculethrough electrodes 701 and 711, the interference positions are expectedto move towards each other or away from each other as shown in the lowerpanel of FIG. 7. This is a result of the interference response incross-conjugated molecules to electron donation and withdrawal. Thisresponse is calculated with Hückel-IV as shown in FIG. 9. This moleculehas a cross-conjugated unit with a methyl ether and a cross-conjugatedunit carboxyl termination. In this context, the carboxyl terminatedcross-conjugated unit is the more “electron withdrawing” group and theether terminated unit is the more “electron donating” group. In FIG. 9,the transmission through this molecule is shown at three differentvoltage points −1, 0, +1, respectively. The interference dips cometowards each other at negative bias and split farther apart at positivebias. In Hückel-IV it was calculated a rectification ratio of 249 at1.2V as shown in FIG. 17( b). Also shown in FIG. 17 is the variationcalculated in the rectification ratio among three transport programs.The maximum rectification ratios are calculated to be 18.6 at 1.0V ingDFTB and 17.6 at 0.6V in ATK. The behavior of the molecules underapplied bias is nearly consistent between the codes with theinterference features moving ˜0.25 eV per 1V bias.

Back to FIG. 7, it can be summed that when the bias voltage is appliedin one direction the interference features in the transmission from thetwo QIU's in one energy direction and when the opposite bias is appliedthe interference features will move in the opposite energy direction.Depending on the position of the interference features at zero bias,this can result in the interference features moving into, or out of, thebias window of the integration with changes in the applied bias voltage.The initial energy position of the interference features is controlledby the nature of the QIU and in particular any electron donating orwithdrawing groups on the QIU. As shown in FIG. 8, the initial(V_(SD)=0) position of the interference features can be tuned around theFermi energy by the use of substitutents off the cross-conjugated unit.Thus, a careful choice of combinations of substitutents (usually onefrom the electron donating side and one from the electron withdrawingside for a rectifier) can lead to desired performance characteristics.FIG. 9 shows how the transmission curves can vary with applied biasvoltage for a small example of a rectifier with two cross-conjugatedunits as the two QIUs. The two interference features shift towards theFermi energy with negative bias and away from the Fermi energy withpositive bias. This leads to substantial asymmetry in thecurrent-voltage curve as these interference features move into or out ofthe bias window.

In all of the above transport calculations, increasing the conjugatedspacer length in the center of the molecule leads to a correspondingincrease in the rectification ratio. One other limiting factor is therelatively small change in transmission probability between the dip inthe interference features and the highest transmission point between theinterference dips. This region between the split interference featureshas a large effect on the maximum rectification ratio. The magnitude ofthe transmission between the split interference features can beincreased dramatically by having a molecular resonance near the Fermilevel with interference features separated equally energetically aboveand below this resonance. Oxygen containing molecules can have molecularresonances near the Fermi level. A molecule that has been experimentallymeasured⁸⁹ and calculated³ contains the anthraquinone functional group,a cyclic cross-conjugated group. This group has the characteristics ofinterest, an interference feature below the Fermi energy and a localizedresonance just above the Fermi energy.⁸⁹

To create a molecule with a resonance split by two antiresonance peaks,a cross-conjugated unit was asymmetrically added. As shown in FIG. 10,the anthraquinone functional group has been taken with an added largeconjugated spacer and two methyl-terminated cross-conjugated groups (thesecond cross-conjugated unit orients the sulfur termination towards theAu electrodes). In FIG. 10, it is shown the current voltage behavior andthe rectification ratio for the molecular rectifier. As the interferencefeatures come together with negative bias, the current decreases from0.2-0.8 Volts, while in the positive bias, the current increases as theinterference dips move apart. The rectification ratio increases steadilyfrom 0-0.8V where it quickly falls off. At 0.8V the rectification ratioof >150,000 is orders of magnitude higher than other published singlemolecule rectifier calculations or experiments, without relying onasymmetric binding to the electrodes. This result indicates thatmolecular devices may function as coherent (fast) electronic devices.

The choice of molecule was dictated by the location of the resonancesand the interference features within one transport code. Any candidatemolecular rectifier would show slightly different behavior using thethree transport programs that have been chosen. While the rectificationbehavior has been calculated for one code, it is believed that thisbehavior can be seen, in experimental measurements with differentfunctional groups chosen to control the position of the resonances andinterference locations. Thus, a larger molecule can be engineered tohave more dramatic rectification properties. As shown in FIG. 10, theobservable quantities for such a system, the current-voltage curve andthe rectification ratio as a function of applied bias are moreprominent. Note that in the current-voltage curve for this system thereare regions where negative differential resistance is evident (currentdecreases with increasing bias voltage). This occurs as an interferencefeature, which was previously outside the bias window, enters the range.This is one central feature of the operation of the bias dependentdevices of the present invention. Interference features can be tuned tomove into and out of the bias window by controlling their initialposition with chemical substitutents and their movement by the appliedbias voltage. Further note that non-switching devices (high and low Kdielectrics) simply require interference features to remain in the biaswindow. The same principles for controlling the initial position of theinterference features are used as for the bias dependent devices but nowdevices need to be designed to ensure that interference features remainactively suppressing current at operational bias voltages.

In FIG. 18, the zero voltage transmission is shown using the threedifferent transport codes. These changes in the transmission features,specifically the lack of split antiresonance features in ATK, have anoticeable effect on the calculated maximum rectification ratio. IngDFTB, the maximum rectification ratio is 501 at 0.52V and in ATK themaximum rectification is 83.5 at 1.5V. While these rectification ratiosare very high for calculations on single molecule rectifiers, they aremuch lower than the value calculated in Hückel-IV. This is notsurprising and is a direct consequence of the variations betweentransport codes. All three of these results will likely vary fromexperimental measurements because of the sensitivity to interference andresonance peaks. This sensitivity is a direct result of having a largedynamic range in transmission probability where small changes in theenergy have large effects on the transport behavior.

Example 12

In this exemplary embodiment of the present invention, it is describedthat one other feature observed in the current-voltage behavior of someof these cross-conjugated molecules is a rapid decrease in current withincreasing voltage, or negative differential resistance (NDR). AnNDR-like behavior is most strikingly seen in the plot shown in FIG. 10where the current in the negative voltage direction decreases 1 order ofmagnitude between 0.2 and 0.7 volts. This is a result of interferencefeatures moving together with increasing voltage. In reported NDR inmolecules on silicon surfaces, the conductance dip is attributed to theconduction band edge passing a molecular resonance.^(13,90) Interferencefeatures in a transmission spectrum are equivalent to resonant peaks butwith an opposite sign in transmission plots. If the transport isdominated by the band edge this indicates that interference dips shouldprovide NDR behavior similar to that reported in the literature for thecase of sweeping through molecular resonances. The advantage ofobserving NDR features caused by interferences (or by resonance withoutcharging) is that these can occur without geometry change in the lowbias tunneling regime. This could lead to a much faster response,enhanced stability, and longevity of potential devices.

Example 13

According to various exemplary embodiments of the present invention setforth above, cross-conjugated molecules and their extreme sensitivity toincident electron energy open up new possibilities in single moleculeelectronics. Most switching and nonlinear behavior in molecules hasrelied on tuning the incident electron energy past a molecular resonanceor conformation change. This can lead to charging of the molecule andpossible device instability.^(29,91) With cross-conjugated molecules, itwas calculated a large dynamic range in electron transmissionprobability to occur in a chemically tunable coherent tunneling rangebetween the frontier molecular orbitals. This allows complex electronicbehavior such as switching, NDR, and rectification to occur in the lowbias electron tunneling regime without charging the molecule. The depthof the interference feature is tunable by minimizing the a transport.The location of the interference feature is shown to be tunable acrossthe HOMO-LUMO gap. This tunability should allow for manipulation of theinterference feature by chemical means so that it occurs near the Fermilevel. To minimize the off-state current, having the interferenceminimum at the Fermi level is important, and also results in the maximumdynamic range. To study molecules with such sensitivity to the bandlineup,^(37,44) it would be ideal if the Fermi level could beexperimentally tuned, as this might prove easier than chemicalmodification. These molecules and their sensitivity to the location ofthe Fermi level should provide a useful means of calibratingexperimental results and theoretical methods. Cross-conjugated moleculescould also be useful in chemical sensors where an extremely small changein electron density must be measured.⁹² it was demonstrated thatchanging the electron donating or withdrawing ability of a side groupattached to the cross-conjugated unit can produce a 3 order of magnitudechange in the conductance. This sensitivity of the cross-conjugated unitto electron density also indicates that attaching a third terminal tothe cross-conjugated double bond could be used to gate the molecule.Experimental realization of three terminal devices with single moleculesis exceedingly difficult but these cross-conjugated molecules seem to bepromising candidates for initial tests. Using a calculated electrostaticpotential to gate cross-conjugated molecules, our calculations suggestthat the large dynamic range in electron transmission probability couldbe used to tune the Fermi level along the 16 orders of magnitude changein electron transmission probability.

If the interference features could be generated in all symmetrycomponents of the transmission, it would be conceivable to have anear-perfect insulator in close proximity to a molecular resonance,increasing the dynamic range of the system. Cross-conjugated moleculesserve as an interesting case where quantum interference effects dominatethe transmission spectrum near the Fermi level and the correlation ofmolecular conductance and energetic proximity to a frontier molecularorbital break down. These molecules serve as a reminder that the vastdimension of chemical space should yield many more interestingcandidates for functional electronic devices.

The foregoing description of the exemplary embodiments of the inventionhas been presented only for the purposes of illustration and descriptionand is not intended to be exhaustive or to limit the invention to theprecise forms disclosed. Many modifications and variations are possiblein light of the above teaching.

The embodiments are chosen and described in order to explain theprinciples of the invention and their practical application so as toenable others skilled in the art to utilize the invention and variousembodiments and with various modifications as are suited to theparticular use contemplated. Alternative embodiments will becomeapparent to those skilled in the art to which the present inventionpertains without departing from its spirit and scope. Accordingly, thescope of the present invention is defined by the appended claims ratherthan the foregoing description and the exemplary embodiments describedtherein.

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1. A molecular quantum interference device, comprising: (a) a molecularquantum interference unit having a first terminal group and a secondterminal group between which quantum interference affects electricalconduction; (b) a molecular spacer having a first terminal group and asecond terminal group and coupled to the molecular quantum interferenceunit through a chemical bonding between the first terminal group of themolecular spacer and the second terminal group of the molecular quantuminterference unit; (c) a first electrode electrically coupled to themolecular quantum interference unit and configured to supply chargecarriers to or receive charge carriers from the molecular quantuminterference unit; and (d) a second electrode electrically coupled tothe molecular spacer and configured to receive charge carriers from orsupply charge carriers to the molecular spacer.
 2. The device of claim1, wherein the molecular quantum interference unit comprises oneselected from the group of a cross-conjugated unit, a meta substitutedphenyl ring, a substituted cyclic system that is not a phenyl ring, anda π-stacked unit.
 3. The device of claim 2, wherein the cross-conjugatedunit comprises a cyclic or acyclic cross-conjugated unit.
 4. The deviceof claim 2, wherein the molecular spacer comprises one selected from thegroup of a single bonded carbon unit, a double bonded carbon unit, atriple bonded carbon unit, a phenyl ring, a thiophene ring, an oxygenatom, a nitrogen atom, a sulphur atom, a silicon atom, a phosphorusatom, a boron atom and any combination of them.
 5. The device of claim4, wherein the chemical bonding between the first terminal group of themolecular spacer and the second terminal group of the molecular quantuminterference unit comprises a carbon-carbon single bond.
 6. The deviceof claim 1, wherein each of the first and second electrodes comprises amaterial having a work function for electron tunneling between the firstand second electrodes, respectively, through the molecular spacer andthe molecular quantum interference unit.
 7. The device of claim 6,wherein each of the first and second electrodes comprises anelectrically conducting or semi-conducting material.
 8. The device ofclaim 7, wherein each of the first and second electrodes comprises atleast one of gold, copper, platinum, palladium, silver, silicon,graphene, carbon nanotubes, iridium, ITO and doped semiconductormaterials.
 9. The device of claim 1, wherein the first electrode iselectrically coupled to the molecular quantum interference unit througha chemical bonding.
 10. The device of claim 9, wherein the chemicalbonding is formed by one or more molecules in or near a surface of thefirst electrode being chemisorbed with at least a part of the firstterminal group of the molecular quantum interference unit throughchemical reacting with the one or more molecules in or near the surface.11. The device of claim 1, wherein the first electrode is electricallycoupled to the molecular quantum interference unit through anon-chemical bonding.
 12. The device of claim 1, wherein the secondelectrode is electrically coupled to the molecular spacer through achemical bonding.
 13. The device of claim 12, wherein the chemicalbonding is formed by one or more molecules in or near a surface of thesecond electrode being chemisorbed with at least a part of the secondterminal group of the molecular spacer through chemical reacting withthe one or more molecules in or near the surface.
 14. The device ofclaim 1, wherein the second electrode is electrically coupled to themolecular spacer through a non-chemical bonding.
 15. The device of claim1, wherein a current source is electrically coupled to at least one ofthe first electrode and the second electrode for establishing a biascurrent or voltage across the first electrode and the second electrode.16. The device of claim 15, wherein when a bias current or voltage isestablished across the first electrode and the second electrode, atransmission spectrum is measurable between the first electrode and thesecond electrode and variable with the bias voltage.
 17. A molecularquantum interference device, comprising: (a) at least one molecularquantum interference unit having a first terminal group and a secondterminal group between which quantum interference affects electricalconduction; (b) at least two molecular spacers, each having a firstterminal group and a second terminal group, wherein a first one of theat least two molecular spacers is coupled to the molecular quantuminterference unit through a chemical bonding between the first terminalgroup of the first molecular spacer and the second terminal group of themolecular quantum interference unit, and a second one of the twomolecular spacers is coupled to the molecular quantum interference unitthrough a chemical bonding between the second terminal group of thesecond molecular spacer and the first terminal group of the molecularquantum interference unit, respectively; (c) a first electrodeelectrically coupled to the second molecular spacer; and (d) a secondelectrode electrically coupled to the first molecular spacer.
 18. Thedevice of claim 17, wherein the molecular quantum interference unitcomprises one selected from the group of a cross-conjugated unit, a metasubstituted phenyl ring, a substituted cyclic system that is not aphenyl ring, and a π-stacked unit.
 19. The device of claim 18, whereinthe cross-conjugated unit comprises a cyclic or acyclic cross-conjugatedunit.
 20. The device of claim 18, wherein each of the at least twomolecular spacers comprises one selected from the group of a singlebonded carbon unit, a double bonded carbon unit, a triple bonded carbonunit, a phenyl ring, a thiophene ring, an oxygen atom, a nitrogen atom,a sulphur atom, a silicon atom, a phosphorus atom, a boron atom and anycombination of them.
 21. The device of claim 20, wherein each of thechemical bonding between the first terminal group of the first molecularspacer and the second terminal group of the molecular quantuminterference unit, and the chemical bonding between the second terminalgroup of the second molecular spacer and the first terminal group of themolecular quantum interference unit comprises a carbon-carbon singlebond.
 22. The device of claim 17, wherein each of the first and secondelectrodes comprises a material having a work function for electrontunneling between the first and second electrodes, respectively, throughthe molecular spacers and the molecular quantum interference unit. 23.The device of claim 22, wherein each of the first and second electrodescomprises an electrically conducting or semi-conducting material. 24.The device of claim 23, wherein each of the first and second electrodescomprises at least one of gold, copper, platinum, palladium, silver,silicon, graphene, carbon nanotubes, iridium, ITO and dopedsemiconductor materials.
 25. The device of claim 17, wherein at leastone of the first electrode and the second electrode is electricallycoupled to a corresponding molecular spacer through a chemical bonding.26. The device of claim 17, wherein at least one of the first electrodeand the second electrode is electrically coupled to a correspondingmolecular spacer through a non-chemical bonding.
 27. The device of claim17, wherein a current source is electrically coupled to at least one ofthe first electrode and the second electrode for establishing a biascurrent or voltage across the first electrode and the second electrode.28. The device of claim 27, wherein when a bias current or voltage isestablished across the first electrode and the second electrode, atransmission spectrum is measurable between the first electrode and thesecond electrode and variable with the bias voltage.
 29. The device ofclaim 17, wherein the at least two molecular spacers comprise at leastone more spacer coupled between the molecular quantum interference unitand one of the first electrode and the second electrode.
 30. A molecularquantum interference device, comprising: (a) at least one molecularspacer having a first terminal group and a second terminal group; (b) atleast two molecular quantum interference units, each having a firstterminal group and a second terminal group between which quantuminterference affects electrical conduction, wherein a first one of theat least two molecular quantum interference units is coupled to the atleast one molecular spacer through a chemical bonding between the firstterminal group of the at least one molecular spacer and the secondterminal group of the first molecular quantum interference unit, and asecond one of the at least two molecular quantum interference units iscoupled to the at least one molecular spacer through a chemical bondingbetween the second terminal group of the at least one molecular spacerand the first terminal group of the second molecular quantuminterference unit, respectively; (c) a first electrode electricallycoupled to the first molecular quantum interference unit; and (d) asecond electrode electrically coupled to the second molecular quantuminterference unit.
 31. The device of claim 30, wherein each of the atleast two molecular quantum interference units comprises one selectedfrom the group of a cross-conjugated unit, a meta substituted phenylring, a substituted cyclic system that is not a phenyl ring, and aπ-stacked unit.
 32. The device of claim 31, wherein the cross-conjugatedunit comprises a cyclic or acyclic cross-conjugated unit.
 33. The deviceof claim 31, wherein the at least one molecular spacer comprises oneselected from the group of a single bonded carbon unit, a double bondedcarbon unit, a triple bonded carbon unit, a phenyl ring, a thiophenering, an oxygen atom, a nitrogen atom, a sulphur atom, a silicon atom, aphosphorus atom, a boron atom and any combination of them.
 34. Thedevice of claim 30, wherein each of the chemical bonding between thefirst terminal group of the at least one molecular spacer and the secondterminal group of the first molecular quantum interference unit, and thechemical bonding between the second terminal group of the at least onemolecular spacer and the first terminal group of the second molecularquantum interference unit comprises a carbon-carbon single bond.
 35. Thedevice of claim 30, wherein each of the first and second electrodescomprises a material having a work function for electron tunnelingbetween the first and second electrodes, respectively, through the atleast one molecular spacer and the at least two molecular quantuminterference units.
 36. The device of claim 35, wherein each of thefirst and second electrodes comprises an electrically conducting orsemi-conducting material.
 37. The device of claim 36, wherein each ofthe first and second electrodes comprises at least one of gold, copper,platinum, palladium, silver, silicon, graphene, carbon nanotubes,iridium, ITO and doped semiconductor materials.
 38. The device of claim30, wherein at least one of the first electrode and the second electrodeis electrically coupled to a corresponding molecular quantuminterference unit through a chemical bonding.
 39. The device of claim30, wherein at least one of the first electrode and the second electrodeis electrically coupled to a corresponding molecular quantuminterference unit through a non-chemical bonding.
 40. The device ofclaim 30, wherein a current source is electrically coupled to at leastone of the first electrode and the second electrode for establishing abias current or voltage across the first electrode and the secondelectrode.
 41. The device of claim 40, wherein when a bias current orvoltage is established across the first electrode and the secondelectrode, a transmission spectrum is measurable between the firstelectrode and the second electrode and variable with the bias voltage.42. The device of claim 30, wherein the at least one molecular spacercomprises at least two molecular spacers coupled between the at leasttwo molecular quantum interference units or between one of the firstelectrode and the second electrode and one of the at least two molecularquantum interference units.
 43. The device of claim 30, wherein the atleast two molecular quantum interference units comprise at least onemore molecular quantum interference unit coupled between the at leastone molecular spacer and one of the first electrode and the secondelectrode.